PART |
Description |
Maker |
1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE (1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction) IC REG VOLT 4.8V 240MA SOT-23 Rectifiers(Rugged glass package/ using a high temperature alloyed construction) Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器(坚固的玻璃封装,采用高温合金建设 Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
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PHILIPS[Philips Semiconductors] http:// NXP Semiconductors N.V.
|
MPXV6115VC6U |
High Temperature Accuracy ntegrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
A3187ELT A3187EUA A3187LLT A3187LT UGN3175SUA A318 |
HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应锁存器的高温作业 SENSOR IC 5CH 5V 5MA SGL 28-SSOP Hall-Effect Latch For High-Temperature Operation(工作于高温的霍尔效应锁存 Hall-effect latche for high-temperature operation
|
Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
|
A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护,高温,霍尔效应锁存主动下拉 SENSOR IC CAC ANALOG OUT 8-DIP PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型,工作于高温,霍尔效应锁存器( PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN From old datasheet system
|
Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
|
MPXH6300AC6T1 MPXH6300A6U MPXH6300A12 |
High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Freescale Semiconductor, Inc
|
BYZ50A2209 BYZ50A33 BYZ50A39 BYZ50A27 BYZ50K22 BYZ |
Silicon-Protectifiers with TVS characteristic ?High Temperature Diodes
|
Diotec Semiconductor
|
MPXH6250A09 |
High Temperature Accuracy Integrated Silicon Pressure Sensor
|
Freescale Semiconductor, Inc
|
GB01SHT12-CAL-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
GB01SHT12-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
BYZ35A22 BYZ35A2209 BYZ35A27 BYZ35A33 BYZ35A39 BYZ |
Silicon-Protectifiers with TVS characteristic ?High Temperature Diodes
|
Diotec Semiconductor
|
MPXV6115V |
High Temperature Accuracy Integrated Silicon Pressure Sensor - Small Outline Package
|
Freescale (Motorola)
|
C1206C105K3NACTU |
Ceramic, 150C-(CxxxxC), 1 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|